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參數(shù)資料
| 型號(hào)： | MWT-A989 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封裝： | ROHS COMPLIANT, SURFACE MOUNT, 4 PIN |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | MWT-A989 |
MwT-A989
DC-4 GHz Packaged FET
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.
(A) LOW NOISE AMPLIFIER CIRCUIT SCHEMATIC
BILL OF MATERIALS
Reference Designation
Value
Unit
Part
Size
C4, C5
100
pF
Chip Capacitor
505
C6, C7
1000
pF
Chip Capacitor
505
C8, C9
0.1
μΦ
Chip Capacitor
505
C1, C2, C10, C12
20
pF
Chip Capacitor
505
C3, C11
0.6
pF
Chip Capacitor
505
L1, L7
5
nH
Chip Inductor
603
L2, L8
1.8
nH
Chip Inductor
603
L3, L4, L5, L6
100
nH
Chip Inductor
603
R3, R4
50
Ohm
Chip Resistor
603
H1, H2
-
Quadrature Hybrid
0.35” x 0.56”
Q1, Q2
MWT-A989
-
MESFET
SOT89
TYPICAL RF PERFORMANCE
(Vds=5.0V, Ids=100mA, Ta=25
°C)
Freq
Gain
ΔG
NF
P1dB
IP3
VSWR
MHZ
dB
dBm
In
Out
1930-1990
15
+/- 0.2
1.2
24
39
1.2:1
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