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參數(shù)資料
| 型號(hào)： | MW5IC2030GMBR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, CASE 1329A-03, TO-272, WB-16, 16 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 627K |
| 代理商： | MW5IC2030GMBR1 |
1
MW5IC2030MBR1 MW5IC2030GMBR1
Motorola, Inc. 2004
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030 wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi-stage structure. Its wideband On-Chip
design makes it usable from 1930 to 1990 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS,
CDMA and W-CDMA.
Final Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 160 mA,
I
DQ2
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band, IS-95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — -49 dBc @ 30 kHz Channel Bandwidth
Driver Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 200 mA, I
DQ2
=
550 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS-95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 24 dB
ACPR @ 885 kHz Offset — -64 dBc @ 30 kHz Channel Bandwidth
On-Chip Matching (50 Ohm Input, >4 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
On-Chip Current Mirror g
m
Reference FET for Self Biasing Application (1)
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
(1) Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1987.
Order this document
by MW5IC2030M/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
1930-1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W-CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW5IC2030MBR1
MW5IC2030MBR1
MW5IC2030GMBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW5IC2030GMBR1
Functional Block Diagram
PIN CONNECTIONS
(Top View)
GND
V
DS1
V
RD2
V
GND
RF
in
V
RG1
/V
GS1
GND
NC
V
DS2/
RF
out
GND
V
GS2
NC
GND
V
RD1
NC
V
RG1
/V
GS1
RF
in
V
DS1
V
GS2
V
DS2
/RF
out
Quiescent Current
Temperature Compensation
V
RD2
V
RG2
V
RD1
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
1
NOTE: Exposed backside flag is source
terminal for transistors.
REV 2
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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參數(shù)描述 |
|---|---|
| MW5IC2030GMBR5 | 功能描述:IC PWR AMP RF 26V 30W TO272-16GW RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW5IC2030GNBR1 | 功能描述:射頻放大器 1.9GHZ RFIC TO272WBN GUL RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW5IC2030M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MW5IC2030MBR1. MW5IC2030GMBR1 1930-1990 MHz. 30 W. 26 V. GSM/GSM EDGE. W-CDMA. PHS. RF LDMOS Wideband Integrated Power Amplifiers |
| MW5IC2030MBR1 | 功能描述:IC PWR AMP RF 26V 30W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW5IC2030MBR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
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