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參數(shù)資料
| 型號： | MVUPS360E3 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 60 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, POWERMITE3, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 358K |
| 代理商： | MVUPS360E3 |
UPS360e3
3 A Schottky Barrier Rectifier
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Notes: 2. TA = TSOLDERING POINT, RΘJS = 3.2 C/W RΘSA = 0 C/W.
3. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode
pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RΘJA in range of
20-40° C/W.
4. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout
RΘJA in range of 65° C/W. See mounting pad below.
5. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4.
PAD LAYOUT
inches [mm]
UU
PP
SS
33
66
00
EE
33
Microsemi
Copyright
2005
5-19-05 Rev A
Page 3
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