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參數(shù)資料
| 型號(hào)： | MV2109 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | HF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-226AC |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 130K |
| 代理商： | MV2109 |
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2103LT1
9.0
10
11
400
2.5
2.9
3.2
MV2104
10.8
12
13.2
400
2.5
2.9
3.2
MMBV2105LT1/MV2105
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2107LT1
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2108LT1/MV2108
24.3
27
29.7
300
2.5
3.0
3.2
MMBV2109LT1/MV2109
29.7
33
36.3
200
2.5
3.0
3.2
MV2111
42.3
47
51.7
150
2.5
3.0
3.2
MV2115
90
100
110
100
2.6
3.0
3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop
the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a ca-
pacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an ad-
mittance bridge at the specified frequency and substitut-
ing in the following equations:
Q
+ 2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
[ 1/16”.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f =
1.0 MHz, TA = +85°C in the following equation, which de-
fines TCC:
TCC +
CT() 85°C) – CT(–65°C)
85
) 65
106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBV2105L | HF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| MMBV2103L | HF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| MV2115RL | HF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
| MV2101RL1 | HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
| MV2115RL1 | HF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MV2109G | 功能描述:變?nèi)荻O管 30V 29.7pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MV2109RLRA | 功能描述:變?nèi)荻O管 30V 29.7pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MV2109RLRAG | 功能描述:變?nèi)荻O管 30V 29.7pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MV2109RLRP | 功能描述:變?nèi)荻O管 30V 29.7pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MV2109RLRPG | 功能描述:變?nèi)荻O管 30V 29.7pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
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