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| 型號(hào)： | MV209RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | VHF BAND, 29 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-92 |
| 封裝： | CASE 182-06, TO-226AC, 2 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | MV209RLRA |
MMBV109LT1, MV209
http://onsemi.com
684
Figure 1. DIODE CAPACITANCE
40
32
24
16
8
0
1
3
10
30
100
VR, REVERSE VOLTAGE (VOLTS)
C T
,CAP
ACIT
ANCE
-
pF
Figure 2. FIGURE OF MERIT
f, FREQUENCY (MHz)
Figure 3. LEAKAGE CURRENT
TA, AMBIENT TEMPERATURE
Figure 4. DIODE CAPACITANCE
TA, AMBIENT TEMPERATURE
Q,
FIGURE
OF
MERIT
10
1000
100
10
100
1000
,REVERSE
CURRENT
(nA)
100
-60
0.01
0.001
0
+40
+100
C
t,
DIODE
CAP
ACIT
ANCE
(NORMALIZED)
1.04
-75
1.02
1.00
0.98
0.96
-25
+25
+75
+125
VR = 3.0 Vdc
f = 1.0 MHz
Ct [ Cc + Cj
36
28
20
12
4
f = 1.0 MHz
TA = 25°C
VR = 3 Vdc
TA = 25°C
VR = 20 Vdc
+120 +140
+80
+60
+20
-40 -20
I R
0.1
1.0
10
20
2.0
0.2
0.02
0.002
0.006
0.06
0.6
6.0
60
-50
0
+50
+100
1.03
1.01
0.99
0.97
NOTES ON TESTING AND SPECIFICATIONS
1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc.
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