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參數(shù)資料
| 型號： | MURS120-7 |
| 廠商： | DIODES INC |
| 元件分類： | 整流器 |
| 英文描述： | RECTIFIER DIODE |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 67K |
| 代理商： | MURS120-7 |
DS30179 Rev. B-1
1 of 2
MURS120
MURS120
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
Maximum Ratings and Electrical Characteristics
@ TA = 25
°C unless otherwise specified
Mechanical Data
Notes:
1. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 0V DC.
3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.
4. Measured with IF = 1.0A, di/dt = 100A/
ms, Duty Cycle 2.0%.
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 40A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
Case: Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Marking: U1DB
Polarity: Cathode Band or Cathode Notch
Weight: 0.093 grams (approx.)
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MURS120
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
@ IR = 5uA
VRRM
VRWM
VR
200
V
RMS Reverse Voltage
VR(RMS)
141
V
Average Rectified Output Current
@ TT = 155
°C
@ TT = 145
°C
IO
1.0
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
40
A
Forward Voltage
@ IF = 1.0A, TJ = 25°C
@ IF = 1.0A, TJ = 150°C
VFM
0.875
0.710
V
Peak Reverse Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 150
°C
IRM
2.0
50
mA
Reverse Recovery Time (Note 3)
trr
25
ns
Forward Recovery Time (Note 4)
tfr
25
ns
Typical Junction Capacitance (Note 2)
Cj
60
pF
Typical Thermal Resistance, Junction to Terminal (Note 1)
RqJT
13
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +175
°C
A
B
C
D
G
H
E
J
SMB
Dim
Min
Max
A
3.30
3.94
B
4.06
4.57
C
1.96
2.21
D
0.15
0.31
E
5.00
5.59
G
0.10
0.20
H
0.76
1.52
J
2.00
2.62
All Dimensions in mm
NEW
PRODUCT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS120A | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:ULTRAFAST RECTIFIER VOLTAGE RANGE 200 to 600 Volts CURRENT 1.0 Ampere |
| MURS120CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ULTRAFAST POWER RECTIFIER DIODE IN CERAMIC |
| MURS120-E3/2CT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120-E3/52T | 功能描述:整流器 1.0 Amp 200V 25ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120-E3/55T | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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