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參數(shù)資料
| 型號： | MURM110T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-216AA |
| 封裝： | PLASTIC, POWERMITE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | MURM110T3 |
MURM105 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance – Junction–to–Lead (Anode) (Note 1)
Thermal Resistance – Junction–to–Tab (Cathode) (Note 1)
Thermal Resistance – Junction–to–Ambient (Note 1)
Rtjl
Rtjtab
Rtja
35
23
277
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Maximum Instantaneous Forward Voltage
VF
TJ = 25°C
TJ = 100°C
V
(IF = 1.0 A)
(IF = 2.0 A)
0.830
0.905
0.680
0.740
Maximum Instantaneous Reverse Current
IR
TJ = 25°C
TJ = 100°C
mA
(VR = Max Rating)
2.0
50
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25°C)
TRR
30
ns
Typical Reverse Recovery Time
(IF = 0.1 A, IR = 0.2 A, IREC = 50 mA)
TRR
6
ns
1. Mounted with minimum recommended pad size, PC Board FR4. See Figures 7 and 8.
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1
0
VR, REVERSE VOLTAGE (VOLTS)
1E–07
1E–09
I F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
0.1
0.55
0.35
0.45
0.65
20
0.85
0.75
0.95
100
°C
25
°C
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1
I F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
0.1
0.55
0.45
0.65
0.85
0.75
0.95
10
40
30
60
50
80
70
100
90
1E–05
1E–06
1E–03
1E–04
100
°C
25
°C
0
VR, REVERSE VOLTAGE (VOLTS)
0
20
10
40
30
60
50
80
70
100
90
70
60
90
80
I R
,INST
ANT
ANEOUS
REVERSE
VOL
T
AGE
(VOL
TS)
C,
CAP
ACIT
ANCE
(pF)
100
150
°C
100
°C
25
°C
150
°C
1E–08
150
°C
20
10
40
30
50
TJ = 25°C
f = 1 MHz
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| MURM105T3 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-216AA |
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| MURS120A | 1 A, 200 V, SILICON, SIGNAL DIODE |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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