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參數(shù)資料
| 型號： | MUR5150E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 5 A, 1500 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, CASE 221B-04, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | MUR5150E |
MUR5150E
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
RθJC
2.0
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 2.0 Amps, TJ = 25°C)
(iF = 5.0 Amps, TJ = 25°C)
vF
1.7
2.0
2.4
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
100
10
500
50
A
Maximum Reverse Recovery Time (IF = 1.0 Amps, di/dt = 50 Amps/s)
trr
130
175
ns
Maximum Forward Recovery Time (IF = 6.5 Amps, di/dt = 12 Amps/s)
tfr
175
225
ns
Peak Transient Overshoot Voltage
VRFM
17
20
Volts
1. Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
dc
SQUARE
WAVE
TJ = 125°C
100
50
20
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
i F
10
5
2
1.0
0.5
0.2
0.1
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
85°C
25°C
TJ = 125°C
1.5 K
VR, REVERSE VOLTAGE (VOLTS)
1.2 K
0.9 K
0.6 K
0.3 K
0
1000
100
10
1
0.1
0.01
0.001
,REVERSE
LEAKAGE
CURRENT
(A)
RI
Figure 2. Typical Reverse Leakage Current
25°C
TJ = 125°C
IF(AV), AVG FORWARD CURRENT (AMPS)
1
0
20
15
17.5
12.5
Figure 3. Forward Power Dissipation
10
7.5
5
2.5
3
25
47
68
P
,A
VERAGE
POWER
DISSIP
ATION
(W
ATTS)
F(A
V)
TC, CASE TEMPERATURE (°C)
90
85
Figure 4. Current Derating Case
2.0
1.0
100
110
115
F(A
V)
4.0
3.0
6.0
5.0
8.0
7.0
105
95
120
125
I
,A
VERAGE
FOR
W
ARD
CURRENT
(AMPS)
dc
SQUARE
WAVE
(RATED VR APPLIED)
RθJC = 2.0°C/W
80°C
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