參數資料
型號: MUR2020CT
元件分類: 整流器
英文描述: 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數: 2/8頁
文件大?。?/td> 160K
代理商: MUR2020CT
MUR2020CTPbF
Bulletin PD-20895 12/04
2
www.irf.com
VBR, Vr
Breakdown Voltage,
200
-
V
IR = 100A
Blocking Voltage
VF
Forward Voltage
-
0.85
V
IF = 8A, TJ = 125°C
-
1.15
V
IF = 16A, TJ = 25°C
-
1.05
V
IF = 16A, TJ = 125°C
IR
Reverse Leakage Current
-
15
A
VR = VR Rated
-
250
A
TJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
55
-
pF
VR = 200V
LS
Series Inductance
-
8.0
-
nH
.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Measured lead to lead 5mm from package body
trr
Reverse Recovery Time
--
35
ns
IF = 1.0A, diF/dt = 50A/s, VR = 30V
--
25
IF = 0.5A, IR = 1.0A, IREC = 0.25A
-21
-
TJ = 25°C
35
TJ = 125°C
IRRM
Peak Recovery Current
-
1.9
-
A
TJ = 25°C
-
4.8
-
TJ = 125°C
Qrr
Reverse Recovery Charge
-
25
-
nC
TJ = 25°C
-78
-
TJ = 125°C
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
I
F = 10A
VR = 160V
diF /dt = 200A/s
Parameters
Min Typ Max Units Test Conditions
Parameters
Min
Typ
Max
Units
TJ
Max. Junction Temperature Range
- 65
-
175
°C
TStg
Max. Storage Temperature Range
- 65
-
175
RthJC
Thermal Resistance, Junction to CasePer Leg
-
2.5
°C/W
RthJA
Thermal Resistance, Junction to Ambient
Per Leg
-
50
RthCS
Thermal Resistance, Case to Heatsink
-
0.5
-
Wt
Weight
-
2.0
-
g
-
0.07
-
(oz)
Mounting Torque
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
Marking Device
MUR2020CT
Thermal - Mechanical Characteristics
Mounting Surface, Flat, Smooth and Greased
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參數描述
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