參數(shù)資料
型號： MUN51xxDW1T1
廠商： Motorola, Inc.
英文描述： Dual Bias Resistor Transistors
中文描述： 雙偏置電阻晶體管
文件頁數(shù)： 2/12頁
文件大小： 216K
代理商： MUN51XXDW1T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = –50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = –50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = –6.0 V, IC = 0)
ICBO
ICEO
IEBO
—
—
–100
nAdc
—
—
–500
nAdc
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–0.5
–0.2
–0.1
–0.2
–0.9
–1.9
–4.3
–2.3
–1.5
–0.18
–0.13
–0.2
mAdc
Collector–Base Breakdown Voltage (IC = –10
μ
A, IE = 0)
Collector–Emitter Breakdown Voltage(3) (IC = –2.0 mA, IB = 0)
ON CHARACTERISTICS(3)
V(BR)CBO
V(BR)CEO
–50
—
—
Vdc
–50
—
—
Vdc
DC Current Gain
(VCE = –10 V, IC = –5.0 mA)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
—
—
—
—
—
—
—
—
—
—
—
—
Collector–Emitter Saturation Voltage (IC = –10 mA, IE = –0.3 mA)
(IC = –10 mA, IB = –5 mA) MUN5130DW1T1/MUN5131DW1T1
(IC = –10 mA, IB = –1 mA) MUN5115DW1T1/MUN5116DW1T1/
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
VCE(sat)
—
—
–0.25
Vdc
Output Voltage (on)
(VCC = –5.0 V, VB = –2.5 V, RL = 1.0 k
) MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
(VCC = –5.0 V, VB = –3.5 V, RL = 1.0 k
) MUN5113DW1T1
3. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
VOL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
Vdc
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MUN51XXT1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bias Resistor Transistor
MUN5211 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor
MUN5211DW 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Dual Bias Resistor Trasnsistors
MUN5211DW_08 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Dual Bias Resistor Transistor
MUN5211DW1T1 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
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