- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371154 > MUN5112T1 (樂山無線電股份有限公司) Bias Resistor Transistor PDF資料下載
參數(shù)資料
| 型號： | MUN5112T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 238K |
| 代理商： | MUN5112T1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
ICBO
ICEO
IEBO
—
—
100
nAdc
—
—
500
nAdc
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10
μ
A, IE = 0)
Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS(3)
V(BR)CBO
V(BR)CEO
50
—
—
Vdc
50
—
—
Vdc
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
—
—
—
—
—
—
—
—
—
—
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
VCE(sat)
—
—
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k
)
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5113T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k
)
3. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
VOL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUN5113T1 | Bias Resistor Transistor |
| MUN5132T1 | Bias Resistor Transistor |
| MUN5111T1 | LED, RED, HI INTENSITY, T1 3/4 |
| MUN51xxDW1T1 | Dual Bias Resistor Transistors |
| MUN5130T1 | PNP SILICON BIAS RESISTOR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5112T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5112T1GS | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 22 k, R2 = 22 k |
| MUN5113 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5113DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5113DW1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Bias Resistor Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。