參數(shù)資料
型號: MUN5112T1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: PNP SILICON BIAS RESISTOR TRANSISTOR
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419-04, SC-70, 3 PIN
文件頁數(shù): 5/10頁
文件大?。?/td> 238K
代理商: MUN5112T1
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112T1
V
I
h
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0
10
20
30
VO = 0.2 V
TA= –25
°
C
75
°
C
100
10
1
0.1
40
50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.0010
1
2
3
4
Vin, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 11. Input Voltage versus Output Current
0.01
V
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0
20
50
75
°
C
25
°
C
TA= –25
°
C
50
0
10
20
30
40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
25
°
C
IC/IB = 10
25
°
C
–25
°
C
VCE = 10 V
TA= 75
°
C
f = 1 MHz
lE = 0 V
TA = 25
°
C
75
°
C
25
°
C
TA= –25
°
C
VO = 5 V
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