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參數(shù)資料
| 型號： | MTY30N50E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| 中文描述： | 30 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | CASE 340G-02, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 237K |
| 代理商： | MTY30N50E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
10000
1000
100
10
1
0
200
300
400
500
100
°
C
25
°
C
2.5
2
1.5
1
0.5
0
–50
–25
0
TJ, JUNCTION TEMPERATURE (
°
C)
25
50
75
100
125
150
VGS = 10 V
ID = 15 A
0.17
0.16
0.15
0.14
0.13
0.12
ID, DRAIN CURRENT (AMPS)
15 V
0.35
0.3
0.25
0.2
0.05
0
0
20
40
60
50
30
10
60
0
0
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
6
8
10
12
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
0
TJ = 25
°
C
VGS = 10 V
VDS
≥
10 V
VGS = 10 V
TJ = 100
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
VGS = 0 V
50
40
30
20
60
50
40
30
20
10
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
0
20
40
60
50
30
10
TJ = 125
°
C
10
0.15
0.1
100
6 V
8 V
5 V
4 V
25
°
C
TJ = –55
°
C
100
°
C
25
°
C
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