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參數(shù)資料
| 型號(hào)： | MTW45N10 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
| 中文描述： | TMOS是45安培，功率場效應(yīng)晶體管100伏特的RDS（on）\u003d 0.035歐姆 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 155K |
| 代理商： | MTW45N10 |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1000
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
0
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
1000
600
400
200
ID = 45 A
800
100
10
150
t, TIME (s)
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
100
μ
s
1 ms
10 ms
DC
0.2
0.02
0.1
D = 0.5
0.05
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
1.0
0.01
0.1
SINGLE PULSE
0.01
10
μ
s
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PDF描述 |
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