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參數(shù)資料
| 型號(hào)： | MTP8N06 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| 中文描述： | TMOS是功率場(chǎng)效應(yīng)晶體管8.0安培60伏特的RDS（on）\u003d 0.12歐姆 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 212K |
| 代理商： | MTP8N06 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
1
2
3
4
0
16
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
4
6
8
0
4
12
16
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
8
12
16
0.04
0.06
0.1
0.14
0
4
8
12
16
0.072
0.076
0.084
0.092
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
0.8
1.2
1.6
1
10
100
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 4 A
7 V
5 V
8
3
5
7
0.08
0.12
14
10
6
2
25
°
C
–55
°
C
VGS = 10 V
15 V
–50
–25
0
25
50
75
100
125
150
0
10
20
60
30
40
TJ = 125
°
C
25
°
C
2
6
10
14
6 V
12
8
4
0.088
0.08
1.4
1
50
4 V
9 V
8 V
1000
25
°
C
100
°
C
TJ = 100
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP8N06E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| MTP8N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTP8P08 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP8P10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP9435BDYQ8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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