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參數(shù)資料
| 型號： | MTP60N05 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM |
| 中文描述： | TMOS是功率場效應晶體管50伏特，60安培的RDS（on）\u003d 0.014歐姆 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MTP60N05 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
50
—
—
55
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = –25
°
C)
Gate–Body Leakage Current
(VGS =
±
15 Vdc, VDS = 0 Vdc)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
4.5
2.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 30 Adc)
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ = 125
°
C)
Forward Transconductance
(VDS = 4.0 Vdc, ID = 20 Adc)
RDS(on)
—
0.010
0.014
Ohms
VDS(on)
—
—
—
—
1.0
0.75
Vdc
gFS
15
48
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS= 25 Vdc VGS= 0 Vdc
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
2775
4000
pF
Output Capacitance
—
750
1070
Transfer Capacitance
—
150
300
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 25 Vdc,D
(DD
VGS = 5.0 Vdc, RG = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
21
40
ns
Rise Time
—
570
1150
Turn–Off Delay Time
,
—
86
170
Fall Time
—
200
400
Gate Charge
(VDD = 25 Vdc,D
(DD
VGS = 5.0 Vdc, RG = 9.1 )
—
42
62
nC
—
8.0
—
,
—
24
—
—
17
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.95
0.85
1.1
—
Vdc
Reverse Recovery Time
(IS = 30 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
50
—
ns
—
34
—
,
—
15
—
Reverse Recovery Stored Charge
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
QRR
—
0.085
—
μ
C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP60N05HDL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM |
| MTP60N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM |
| MTP60N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM |
| MTP60N06HD_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP60N10E7L | 制造商:ON Semiconductor 功能描述: |
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