參數資料
型號: MTD10N10ELT4G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
中文描述: 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, CASE 369C-01, DPAK-3
文件頁數: 3/7頁
文件大?。?/td> 86K
代理商: MTD10N10ELT4G
MTD10N10EL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
D
I
10
5
00
2
5
3
1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
V
GS
= 10 V
7 V
3.5 V
4 V
5 V
T
J
= 25
°
C
D
I
5
01
2
3
4
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
V
DS
5 V
55
°
C
T
J
= 100
°
C
4
15
20
4.5 V
25
°
C
15
20
3 V
2 V
10
R
I
D
, DRAIN CURRENT (AMPS)
T
J
= 25
°
C
V
GS
= 5 V
10 V
0.25
0.2
5
10
15
R
0.35
0.25
0.15
0.050
5
10
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
T
J
= 25
°
C
100
°
C
55
°
C
0.15
0.1
0
15
20
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
V
GS
= 0 V
0
40
60
1
100
20
1
T
J
= 125
°
C
10
100
°
C
R
(
T
J
, JUNCTION TEMPERATURE (
°
C)
V
GS
= 5 V
I
D
= 5 A
50
0
50
100
150
125
25
25
75
2
1.5
1
0.5
0
80
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