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參數(shù)資料
| 型號： | MT55L256L18P1 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 3.3V I/O，256K x 18,Flow-Through ZBT SRAM(3.3V輸入/輸出,4Mb流通式同步靜態(tài)存儲器) |
| 中文描述： | 3.3V的I / O的256 × 18，流量通過ZBT SRAM的電壓（3.3V輸入/輸出，4Mb的流通式同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 12/25頁 |
| 文件大小： | 434K |
| 代理商： | MT55L256L18P1 |
12
4Mb: 256K x 18, 128K x 32/36 Pipelined ZBT SRAM
MT55L256L18P1_2.p65
–
Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
PRELIMINARY
4Mb: 256K x 18, 128K x 32/36
PIPELINED ZBT SRAM
FUNCTION
READ
WRITE Byte
“
a
”
WRITE Byte
“
b
”
WRITE Byte
“
c
”
WRITE Byte
“
d
”
WRITE All Bytes
WRITE ABORT/NOP
R/W#
H
L
L
L
L
L
L
BWa#
X
L
H
H
H
L
H
BWb#
X
H
L
H
H
L
H
BWc#
X
H
H
L
H
L
H
BWd#
X
H
H
H
L
L
H
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
SECOND ADDRESS (INTERNAL)
X...X01
X...X00
X...X11
X...X10
THIRD ADDRESS (INTERNAL)
X...X10
X...X11
X...X00
X...X01
FOURTH ADDRESS (INTERNAL)
X...X11
X...X10
X...X01
X...X00
LINEAR BURST ADDRESS TABLE (MODE = LOW)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
SECOND ADDRESS (INTERNAL)
X...X01
X...X10
X...X11
X...X00
THIRD ADDRESS (INTERNAL)
X...X10
X...X11
X...X00
X...X01
FOURTH ADDRESS (INTERNAL)
X...X11
X...X00
X...X01
X...X10
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS (x32/x36)
NOTE:
Using R/W# and BYTE WRITE(s), any one or more bytes may be written.
FUNCTION
READ
WRITE Byte
“
a
”
WRITE Byte
“
b
”
WRITE All Bytes
WRITE ABORT/NOP
R/W#
H
L
L
L
L
BWa#
X
L
H
L
H
BWb#
X
H
L
L
H
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS (x18)
NOTE:
Using R/W# and BYTE WRITE(s), any one or more bytes may
be written.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT55L256V18P1 | 2.5V I/O，256K x 18,Flow-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器) |
| MT55L512L18P-1 | IBM AT-AT NULL MODEM CABL15 FT FF |
| MT58L128L18D | 128K x 18,3.3V I/O, Pipelined, Double-Cycle Deselect，SyncBurst SRAM(2Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)RAM) |
| MT58L64L32D | 64K x 32，3.3V I/O, Pipelined, Double-Cycle Deselect，SyncBurst SRAM(2Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)RAM) |
| MT58L128L18F | 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55L256L18P1F-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55L256L18P1T-7.5 | 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55L256L18P1T-7.5 TR | 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V |
| MT55L256L18P1T-7.5IT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MT55L256L18P1T-7.5TR | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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