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參數(shù)資料
| 型號： | MT55L128L36F1 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 3.3V I/O，128K x 36，F(xiàn)low-Through ZBT SRAM(3.3V輸入/輸出,4Mb流通式同步靜態(tài)存儲器) |
| 中文描述： | 3.3V的I / O的128K的× 36，流量通過ZBT SRAM的電壓（3.3V輸入/輸出，4Mb的流通式同步靜態(tài)存儲器） |
| 文件頁數(shù)： | 19/25頁 |
| 文件大?。?/td> | 451K |
| 代理商： | MT55L128L36F1 |
19
4Mb: 256K x 18, 128K x 32/36 Flow-Through ZBT SRAM
MT55L256L18F1_2.p65
–
Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
FLOW-THROUGH ZBT SRAM
PRELIMINARY
Q
50
V = 1.5V
Z = 50
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
3.3V I/O AC TEST CONDITIONS
Input pulse levels ...................................V
SS
to 3.3V
Input rise and fall times..................................... 1ns
Input timing reference levels .......................... 1.5V
Output reference levels ................................... 1.5V
Output load ............................. See Figures 1 and 2
LOAD DERATING CURVES
The Micron 256K x 18, 128K x 32, and 128K x 36 ZBT
SRAM timing is dependent upon the capacitive loading
on the outputs.
Consult the factory for copies of I/O current versus
voltage curves.
Q
50
V = 1.25V
Z = 50
Figure 3
Q
225
225
5pF
+2.5V
Figure 4
2.5V I/O AC TEST CONDITIONS
Input pulse levels ...................................V
SS
to 2.5V
Input rise and fall times..................................... 1ns
Input timing reference levels ........................ 1.25V
Output reference levels ................................. 1.25V
Output load ............................. See Figures 3 and 4
3.3V I/O Output Load Equivalents
2.5V I/O Output Load Equivalents
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT55L128V32F1 | 2.5V I/O， 128K x 32，F(xiàn)low-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器) |
| MT55L128V36F1 | 2.5V I/O，128K x 36，F(xiàn)low-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器) |
| MT55L128L32P1 | 3.3V I/O，128K x 32，F(xiàn)low-Through ZBT SRAM(3.3V輸入/輸出,4Mb流通式同步靜態(tài)存儲器) |
| MT55L128L36P1 | 3.3V I/O，128K x 36，F(xiàn)low-Through ZBT SRAM(3.3V或輸入/輸出,4Mb流通式同步靜態(tài)存儲器) |
| MT55L128V32P1 | 2.5V I/O，128K x 32，F(xiàn)low-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55L128L36F1-11A | 制造商:Micron Technology Inc 功能描述: |
| MT55L128L36F1F-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55L128L36F1T-11 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55L128L36P1T-7.5 | 制造商:Cypress Semiconductor 功能描述:128KX36 SRAM PLASTIC TQFP 3.3V |
| MT55L128L36P1T-7.5 IT | 制造商:Cypress Semiconductor 功能描述:4MB 128KX36 SRAM PLASTIC IND T |
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