參數(shù)資料
型號: MT4S32U
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
中文描述: 東芝硅晶體管型瑞展
文件頁數(shù): 3/8頁
文件大?。?/td> 161K
代理商: MT4S32U
MT4S32U
2000-09-11 3/8
10
1
3
100
2
0
3
30
VCE
=
1 V
f
=
1 GHz
Ta
=
25°C
1
10
1
25
100
20
15
10
5
0
3
30
Ta
=
25°C
VCE
=
3 V
VCE
=
1 V
10
1
25
100
20
15
10
5
0
3
Collector current I
C
(mA)
30
f
=
2 GHz
Ta
=
25°C
VCE
=
3 V
VCE
=
1 V
10
1
25
100
20
15
10
5
0
3
30
f
=
1 GHz
Ta
=
25°C
VCE
=
3 V
VCE
=
1 V
|S21e|
2
I
C
Collector current I
C
(mA)
NF – I
C
N
C
ob
, C
re
– V
CB
Collector-base voltage
V
CB
(V)
C
o
R
r
1
0.1
0.1
10
1
Cob
f
=
1 MHz
Ta
=
25°C
Cre
0.3
0.5
0.3
0.5
3
5
T
I
2
Collector current I
C
(mA)
I
2
|S21e|
2
I
C
Collector current I
C
(mA)
f
T
– I
C
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