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參數(shù)資料
| 型號： | MT48LC8M16A2FC-8E |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件頁數(shù)： | 32/59頁 |
| 文件大?。?/td> | 1822K |
| 代理商： | MT48LC8M16A2FC-8E |
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32
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65
–
Rev. E; Pub. 1/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
128Mb: x4, x8, x16
SDRAM
NOTE (continued):
4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current
state only.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs to bank
m
listed in the Command (Action) column include READs or WRITEs with auto precharge
enabled and READs or WRITEs with auto precharge disabled.
8. CONCURRENT AUTO PRECHARGE: Bank
n
will initiate the auto precharge command when its burst has been
interrupted by bank
m
’
s burst.
9. Burst in bank
n
continues as initiated.
10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will interrupt the READ on bank
n
, CAS latency later (Figure 7).
11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will interrupt the READ on bank
n
when registered (Figures 9 and 10). DQM should be used one clock prior to the
WRITE command to prevent bus contention.
12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will interrupt the WRITE on bank
n
when registered (Figure 17), with the data-out appearing CAS latency later. The
last valid WRITE to bank
n
will be data-in registered one clock prior to the READ to bank
m
.
13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will interrupt the WRITE on bank
n
when registered (Figure 15). The last valid WRITE to bank
n
will be data-in
registered one clock prior to the READ to bank
m
.
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the READ on bank
n
, CAS latency later. The PRECHARGE to bank
n
will begin when the READ to bank
m
is
registered (Figure 24).
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will
interrupt the READ on bank
n
when registered. DQM should be used two clocks prior to the WRITE command to
prevent bus contention. The PRECHARGE to bank
n
will begin when the WRITE to bank
m
is registered (Figure 25).
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the WRITE on bank
n
when registered, with the data-out appearing CAS latency later. The PRECHARGE to
bank
n
will begin after
t
WR is met, where
t
WR begins when the READ to bank
m
is registered. The last valid WRITE to
bank
n
will be data-in registered one clock prior to the READ to bank
m
(Figure 26).
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will
interrupt the WRITE on bank
n
when registered. The PRECHARGE to bank
n
will begin after
t
WR is met, where
t
WR
begins when the WRITE to bank
m
is registered. The last valid WRITE to bank
n
will be data registered one clock prior
to the WRITE to bank
m
(Figure 27).
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相關(guān)代理商/技術(shù)參數(shù) |
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| MT48LC8M16A2FC-8EIT | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM |
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| MT48LC8M16A2P-6A | 制造商:Micron Technology Inc 功能描述:SDRAM 128MBIT 167MHZ 54TSOP 制造商:Micron Technology Inc 功能描述:SDRAM, 128MBIT, 167MHZ, 54TSOP 制造商:Micron Technology Inc 功能描述:SDRAM, 128MBIT, 167MHZ, 54TSOP; Memory Type:DRAM - Synchronous; Memory Configuration:8M x 16bit; Access Time:6ns; Memory Case Style:TSOPII; No. of Pins:54; Interface Type:-; Operating Temperature Min:0C; Operating Temperature ;RoHS Compliant: Yes |
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