參數(shù)資料
型號(hào)： MT48LC8M16A2FB-7ELIT
廠商： Micron Technology, Inc.
英文描述： SYNCHRONOUS DRAM
中文描述： 同步DRAM
文件頁數(shù)： 23/59頁
文件大?。?/td> 1822K
代理商： MT48LC8M16A2FB-7ELIT
23
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65
–
Rev. E; Pub. 1/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
128Mb: x4, x8, x16
SDRAM
least one clock plus time, regardless of frequency.
In addition, when truncating a WRITE burst, the DQM
signal must be used to mask input data for the clock edge
prior to, and the clock edge coincident with, the
PRECHARGE command. An example is shown in Figure
18. Data
n
+ 1 is either the last of a burst of two or the last
desired of a longer burst. Following the PRECHARGE
command, a subsequent command to the same bank
cannot be issued until
t
RP is met.
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the opti-
mum time (as described above) provides the same op-
eration that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
PRECHARGE command is that it requires that the com-
mand and address buses be available at the appropriate
time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate
fixed-length or full-page bursts.
Figure 18
WRITE to PRECHARGE
DQM
CLK
DQ
T2
T1
T4
T3
T0
COMMAND
ADDRESS
BANK
a
,
COL
n
T5
NOP
WRITE
PRECHARGE
NOP
NOP
D
IN
n
D
IN
n
+ 1
ACTIVE
tRP
BANK
(
a
or all)
t
WR
BANK
a
,
ROW
DQM
DQ
COMMAND
ADDRESS
COL n
a
,
NOP
WRITE
PRECHARGE
NOP
NOP
D
IN
n
D
IN
n
+ 1
ACTIVE
tRP
DON
’
T CARE
BANK
(
a
or all)
t
WR
NOTE:
DQM could remain LOW in this example if the WRITE burst is a fixed length
of two.
BROW
a
,
T6
NOP
NOP
t
WR@
t
CK 15ns
t
WR@
t
CK < 15ns
Data for any WRITE burst may be truncated with a
subsequent READ command, and data for a fixed-length
WRITE burst may be immediately followed by a READ
command. Once the READ command is registered, the
data inputs will be ignored, and WRITEs will not be
executed. An example is shown in Figure 17. Data
n
+ 1 is
either the last of a burst of two or the last desired of a
longer burst.
Data for a fixed-length WRITE burst may be followed
by, or truncated with, a PRECHARGE command to the
same bank (provided that auto precharge was not acti-
vated), and a full-page WRITE burst may be truncated
with a PRECHARGE command to the same bank. The
PRECHARGE command should be issued
t
WR after the
clock edge at which the last desired input data element is
registered. The auto precharge mode requires a
t
WR of at
Figure 17
WRITE to READ
CLK
DQ
T2
T1
T3
T0
COMMAND
ADDRESS
NOP
WRITE
BANK,
COL
n
D
IN
n
D
IN
n
+ 1
D
OUT
b
READ
NOP
NOP
BANK,
COL
b
NOP
D
OUT
b
+ 1
T4
T5
NOTE:
The WRITE command may be to any bank, and the READ command may
be to any bank. DQM is LOW. CAS latency = 2 for illustration.
Figure 16
Random WRITE Cycles
CLK
DQ
D
IN
n
T2
T1
T3
T0
COMMAND
ADDRESS
WRITE
BANK,
COL
n
D
IN
a
D
IN
x
D
IN
m
WRITE
WRITE
WRITE
BANK,
COL
a
BANK,
COL
x
BANK,
COL
m
NOTE:
Each WRITE command may be to any bank.
DQM is LOW.
相關(guān)PDF資料
PDF描述
MT48LC8M16A2FB-8E SYNCHRONOUS DRAM
MT48LC8M16A2FB-8EIT SYNCHRONOUS DRAM
MT48LC8M16A2FB-8EL SYNCHRONOUS DRAM
MT48LC8M16A2FB-8ELIT SYNCHRONOUS DRAM
MT48LC8M16A2FC-75 SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT48LC8M16A2FB-8E 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM
MT48LC8M16A2FB-8EIT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM
MT48LC8M16A2FB-8EL 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM
MT48LC8M16A2FB-8ELIT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM
MT48LC8M16A2FC-75 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*