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參數(shù)資料
| 型號： | MT3S05T |
| 廠商： | Toshiba Corporation |
| 英文描述： | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| 中文描述： | 硅晶體管型瑞展 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 86K |
| 代理商： | MT3S05T |
MT3S05T
2002-01-23
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S05T
VHF~UHF Band Low Noise Amplifier Applications
Sutable for use in an OSC
Low noise figure
NF = 1.4dB
Excellent collector current linearity
|S21e|
2
= 8.5dB (@1 V/5 mA/1 GHz)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
10
V
Collector-emitter voltage
V
CEO
5
V
Emitter-base voltage
V
EBO
2
V
Collector current
I
C
40
mA
Base current
I
B
10
mA
Collector power dissipation
P
C
100
mW
Junction temperature
Tj
125
C
Storage temperature range
Tstg
55~125
C
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: g (typ.)
T K
2
1
3
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