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參數(shù)資料
| 型號： | MSMBJ58CAE3TR |
| 廠商： | MICROSEMI CORP-IRELAND |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 289K |
| 代理商： | MSMBJ58CAE3TR |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01000 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
GRAPHS
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50 100
200
1000
10,000
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TC = 25 °C
tw
– Pulse Width -
s
FIGURE 1 Peak Pulse Power vs. Pulse Time
Test waveform parameters: tr=10
s, tw=1000 s
FIGURE 2 Pulse Waveform for Exponential Surge
VBR Breakdown Voltage – Volts
FIGURE 4 Typical Capacitance vs Breakdown Voltage
TL Lead Temperature °C
FIGURE 3 Derating Curve
0.1
0.2
0.3
0.5
1.0
2.0
10
20
30
50
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