- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄65817 > MSICSS10060 (MICROSEMI CORP-LAWRENCE) 10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | MSICSS10060 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | U-4, SMD.22, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 170K |
| 代理商： | MSICSS10060 |
PRELIMINARY
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0109 Rev. 1 (091991)
Page 2 of 4
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 inch (0.279 mm).
4. Dimension TL measured from maximum HD.
5. Outline in this zone is not controlled.
6. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured
by direct methods.
8. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
9. All three leads.
10. Radius (r) applies to both inside corners of tab.
11. Cathode is electrically connected to the case.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
* FIGURE 1- Physical dimensions (TO-205AF - formerly low profile TO-39).
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.160
.180
4.07
4.57
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
7
LD
.016
.021
0.41
0.53
8, 9
LL
.500
.750
12.7
19.05
8, 9
LU
.016
.019
0.41
0.48
8, 9
L1
.050
1.27
8, 9
2
.250
6.35
8, 9
P
.100
2.54
6
Q
.040
1.02
5
R
.010
0.254
10
TL
.029
.045
0.74
1.14
TW
.028
.034
0.72
0.86
Α
45° TP
7
Term 1
Anode
Term 2
Open (no connection)
Term 3
Cathode (case)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSICSS05120CA | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE |
| MSICSS05120D | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE |
| MSM5052-GS-K80PINS | 4-BIT, MROM, 0.032768 MHz, MICROCONTROLLER |
| MSM5052-GS-K56PINS | 4-BIT, MROM, 0.032768 MHz, MICROCONTROLLER |
| MSM5054-GS-K56PINS1.5V | 4-BIT, MROM, 0.032768 MHz, MICROCONTROLLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSICSS10060CA | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:10A / 600V Silicon Carbide Dual Schottky Rectifier |
| MSICSS10060CC | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:10A / 600V Silicon Carbide Dual Schottky Rectifier |
| MSICSS10060D | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:10A / 600V Silicon Carbide Dual Schottky Rectifier |
| MSiCSS10120 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON CARBIDE SCHOTTKY POWER RECTIFIER |
| MSICSS10120CA | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。