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    參數(shù)資料
    型號: MSG43004
    廠商: PANASONIC CORP
    元件分類: 小信號晶體管
    英文描述: SiGe HBT type For low-noise RF amplifier
    中文描述: L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
    封裝: ROHS COMPLIANT, ML3-N2, 3 PIN
    文件頁數(shù): 1/4頁
    文件大?。?/td> 94K
    代理商: MSG43004
    Transistors
    MSG43004
    SiGe HBT type
    1
    Publication date: November 2004
    SJC00320BED
    For low-noise RF amplifier
    Features
    Compatible between high breakdown voltage and high cut-off frequency
    Low noise, high-gain amplification
    Optimal size reduction and high level integration for ultra-small packages
    Absolute Maximum Ratings
    T
    a
    =
    25
    °
    C
    Parameter
    Symbol
    Conditions
    Min
    Typ
    Max
    Unit
    Collector-base cutoff current (Emitter open)
    I
    CBO
    V
    CB
    =
    9 V, I
    E
    =
    0
    V
    CE
    =
    6 V, I
    B
    =
    0
    V
    EB
    =
    1 V, I
    C
    =
    0
    V
    CE
    =
    3 V, I
    C
    =
    15 mA
    V
    CE
    =
    3 V, I
    C
    =
    30 mA, f
    =
    2 GHz
    V
    CE
    =
    3 V, I
    C
    =
    30 mA, f
    =
    2 GHz
    V
    CE
    =
    3 V, I
    C
    =
    15 mA, f
    =
    2 GHz
    V
    CB
    = 3 V, I
    E
    = 0, f = 1 MHz
    1
    μ
    A
    μ
    A
    μ
    A
    Collector-emitter cutoff current (Base open)
    I
    CEO
    I
    EBO
    1
    Emitter-base cutoff current (Collector open)
    1
    Forward current transfer ratio
    h
    FE
    100
    220
    Transition frequency
    *
    f
    T
    17
    GHz
    Forward transfer gain
    *
    S
    21e
    2
    6.0
    9.0
    dB
    Noise figure
    *
    NF
    1.4
    2.0
    dB
    Collector output capacitance
    (Common base, input open circuited)
    *
    C
    ob
    0.6
    0.9
    pF
    Electrical Characteristics
    T
    a
    =
    25
    °
    C
    ±
    3
    °
    C
    Unit: mm
    Parameter
    Symbol
    Rating
    Unit
    Collector-base voltage (Emitter open)
    V
    CBO
    9
    V
    Collector-emitter voltage (Base open)
    V
    CEO
    6
    V
    Emitter-base voltage (Collector open)
    V
    EBO
    I
    C
    1
    V
    Collector current
    100
    mA
    Collector power dissipation
    *
    P
    C
    100
    mW
    Junction temperature
    T
    j
    T
    stg
    125
    °
    C
    °
    C
    Storage temperature
    55 to
    +
    125
    Marking Symbol: 5Y
    Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
    2. Observe precautions for handling. Electrostatic sensitive devices.
    3. *: Verified by random sampling
    Note)*: Copper plate at the collector is 5.0 mm
    2
    on substrate at 10 mm
    ×
    12
    mm
    ×
    0.8 mm.
    1: Base
    2: Emitter
    3: Collector
    ML3-N2 Package
    0
    ±
    1
    1.00
    ±0.05
    2
    3
    0.39
    +0.03
    0.25
    ±0.05
    0.25
    ±0.05
    0
    ±
    0.65
    ±0.01
    0
    ±
    1
    2
    0
    ±
    0.05
    ±0.03
    0
    ±
    3
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