參數(shù)資料
型號： MSAFA1N100D
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： 功率晶體管
英文描述： Circular Connector; No. of Contacts:37; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-35 RoHS Compliant: No
中文描述： 1 A, 1000 V, 13.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DIE-2
文件頁數(shù)： 1/3頁
文件大?。?/td> 78K
代理商： MSAFA1N100D
MSC1054.PDF 6/23/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T
C
= 25
°
C unless otherwise specified
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
DESCRIPTION:
N-Channel enhancement mode high density MOSFET die
Passivation: oxynitride, 4um
Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
Low On-state resistance
Avalanche and Surge Rated
High Freq. Switching
Ultra Low Leakage Current
UIS rated
Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix
MAXIMUM RATINGS:
SYMBOL
STATIC ELECTRICAL CHARACTERISTICS:
2830 S. Fairview Street
Santa Ana, CA 92704
Phone: (714) 979-8220
Fax: (714) 559-5989
PARAMETER
VALUE
UNIT
V
DSS
V
GS
I
D1
I
D2
I
DM1
I
AR
E
AR
E
AS
T
J,
T
STG
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ T
C
= 25
°
C
Continuous Drain Current @ T
C
= 100
°
C
Pulsed Drain Current
x
@ T
C
= 25
°
C
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
1000
±20
1
.8
4
1
TBD
TBD
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
°
C
-55 to 150
SYMBO
L
BV
DSS
V
GS(TH)2
V
GS(TH)1
R
DS(ON)1
CHARACTERISTIC / TEST CONDITIONS
MIN
TYP
MAX
UNIT
Drain - Source Breakdown Voltage (V
GS
= 0V, I
D
= 0.25mA)
Gate Threshold Voltage (V
GS
=
V
DS
,
I
D
= 1 m
A, T
J
= 37
°
C
Gate Threshold Voltage (V
GS
=
V
DS
,
I
D
= 1 m
A, T
J
= 25
°
C
Drain – Source On-State Resistance (V
GS
=
10V, I
D
=
I
D1,
T
J
=
25
°
C)
Drain – Source On-State Resistance (V
GS
=
7V, I
D
= 5…150 mA
,
T
J
= 37
°
C)
Drain – Source On-State Resistance (V
GS
=
7V, I
D
= 5…150 mA
,
T
J
= 25
°
C)
Drain – Source On-State Resistance (V
GS
=
7V, I
D
= 5…150 mA
,
T
J
= 60
°
C)
Drain – Source On-State Resistance (V
GS
= 7
V, I
D
=
I
D1,
T
J
= 1
25
°
C)
Zero Gate Voltage Drain Current (V
DS
= 80%BV
DSS
,
V
GS
= 0V,
T
J
=
25
°
C)
Zero Gate Voltage Drain Current (V
DS
= 80%BV
DSS
,
V
GS
= 0V,
T
J
= 37
°
C)
Zero Gate Voltage Drain Current (V
DS
= 80%BV
DSS
,
V
GS
= 0V,
T
J
= 1
25
°
C)
Gate-Source Leakage Current (V
GS
= ±20V,
V
CE
=0V)
Gate-Source Leakage Current (V
GS
= ±20V
V
CE
=0V), Tj= 37
°
C
Gate-Source Leakage Current (V
GS
= ±20V
V
CE
=0V), Tj= 125
°
C
1000
Volts
Volts
Volts
ohm
3.4
3.5
12.5
2
4.5
13.5
R
DS(ON)2
R
DS(ON)3
R
DS(ON)4
R
DS(ON)5
I
DSS1
I
DSS2
I
DSS3
I
GSS1
I
GSS2
I
GSS3
12.5
11.5
15
23.5
ohm
ohm
ohm
ohm
uA
uA
uA
nA
nA
nA
10
1
100
±100
10
500
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參數(shù)描述
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