參數(shù)資料
型號(hào): MRFIC1856
廠商: Motorola, Inc.
英文描述: GaAs Integrated Power Amplifier(GaAs集成式功率放大器)
中文描述: 砷化鎵集成功率放大器(砷化鎵集成式功率放大器)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 148K
代理商: MRFIC1856
SEMICONDUCTOR
TECHNICAL DATA
DUAL–BAND/DUAL–MODE
GaAs INTEGRATED POWER
AMPLIFIER
PLASTIC PACKAGE
CASE 948M
(TSSOP–20EP, Tape & Reel Only)
PIN CONNECTIONS
Order this document by MRFIC1856/D
1
20
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8
(Top View)
VG3A
VD1A
VSS
RFinA
VD2A
RFoA/VD3A
RFoA/VD3A
RFoA/VD3A
Gnd
RFoB/VD3B
RFoB/VD3B
12
9
VD1B
VG3B
11
10
RFoB/VD3B
VD2B
VG1A
VG1B
RFinB
Gnd
RFoB/VD3B
20
1
Device
Operating
Temp Range
Package
ORDERING INFORMATION
MRFIC1856R2
TC = –35 to 85
°
C
TSSOP–20EP
(Scale 2:1)
1
SOLUTIONS – RF AND IF DEVICE DATA
The MRFIC1856 is designed for dual–band subscriber equipment
applications at 3.6 V in the cellular (800 MHz) and PCS (1900 MHz) bands.
The device incorporates two pHEMT GaAs amplifier chains in one package,
allowing the most flexibility and highest performance while reducing board
space. Target applications include dual–band/dual–mode handsets for
TDMA/AMPS and PCS TDMA cellular phones.
Designed to Operate in Frequency Ranges of:
824 to 849 MHz TDMA/AMPS
1850 to 1910 MHz PCS TDMA
3.6 V Operation
30 dBm Output Power PCS TDMA
31 dBm Output Power TDMA Cellular
31 dBm Output Power AMPS
VG3B
VD1B
RFoB/VD3B
VD2B
VG1B
RFinB
Simplified Block Diagram
Vg3A
Vd1A
RFoA/VD3A
Vd2A
VG1A
RFinA
VSS
Bias
This device contains 8 active transistors.
This document contains information on a new product. Specifications and information herein
are subject to change without notice.
Motorola, Inc. 2000
Rev 1
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