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參數(shù)資料
| 型號(hào)： | MRFE6S9046NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-270, CASE 1486-03, WB, 4 PIN |
| 文件頁數(shù)： | 19/21頁 |
| 文件大?。?/td> | 630K |
| 代理商： | MRFE6S9046NR1 |
MRFE6S9046NR1 MRFE6S9046GNR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
70
14
24
0
75
VDD = 28 Vdc
IDQ = 300 mA
f = 940 MHz
TC = 30_C
25
_C
85
_C
30
_C
10
1
18
16
30
15
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Drain Efficiency
versus Output Power
G
ps
,POWER
GAIN
(dB)
Gps
22
20
60
45
25
_C
85
_C
Figure 9. EVM versus Frequency
f, FREQUENCY (MHz)
Pout = 26.5 W Avg.
17.8 W Avg.
5 W Avg.
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
980
0
6
900
3
1
970
940
920
910
4
2
5
VDD = 28 Vdc
IDQ = 285 mA
EDGE Modulation
TC = 85_C
25
_C
30
_C
75
40
0
Pout, OUTPUT POWER (WATTS)
50
55
60
70
10
Figure 10. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
40
50
65
VDD = 28 Vdc, IDQ = 285 mA
f = 940 MHz, EDGE Modulation
TC = 85_C
25
_C
30
_C
85
50
0
Pout, OUTPUT POWER (WATTS)
55
60
65
70
75
20
Figure 11. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
30
50
40
VDD = 28 Vdc, IDQ = 285 mA
f = 940 MHz, EDGE Modulation
Pout, OUTPUT POWER (WATTS) AVG.
60
20
0
10
1
35
65
59
41
5
17
30
_C
85
_C
Figure 12. EVM and Drain Efficiency
versus Output Power
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
TC = 30_C
EVM
VDD = 28 Vdc, IDQ = 285 mA
f = 940 MHz, EDGE Modulation
980
16
22
900
TC = 30_C
25
_C
85
_C
21
20
19
18
17
920
940
960
f, FREQUENCY (MHz)
Figure 13. Power Gain versus Frequency
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
Pout = 35 W CW
IDQ = 300 mA
910
930
950
970
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
930
960
950
45
20
30
80
18
16
14
12
10
8
6
4
2
53
47
23
29
11
25
_C
85
_C
10
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相關(guān)代理商/技術(shù)參數(shù) |
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| MRFE6S9060GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9060NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9060NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9125NBR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9125NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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