參數(shù)資料
型號(hào)： MRFE6S8046NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝： ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件頁數(shù)： 11/17頁
文件大小： 439K
代理商： MRFE6S8046NR1
MRFE6S8046NR1 MRFE6S8046GNR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW
Frequency
Gps
(dB)
hD
(%)
IRL
(dB)
864 MHz
19.9
58.7
-12
880 MHz
20
58.5
-17
894 MHz
19.8
57.7
-17
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, 864-894 MHz Bandwidth
Characteristic
Symbol
Min
Typ
Max
Unit
Pout @ 1 dB Compression Point
P1dB
—
47
—
W
IMD Symmetry @ 41 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
22
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
25
—
MHz
Gain Flatness in 30 MHz Bandwidth @ Pout = 35.5 W CW
GF
—
0.2
—
dB
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.017
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.004
—
dBm/°C
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W
Avg., 864-894 MHz EDGE Modulation
Frequency
Gps
(dB)
hD
(%)
Spectral
Regrowth @
400 kHz
(dBc)
Spectral
Regrowth @
600 kHz
(dBc)
EVM
(% rms)
864 MHz
19.8
43.8
61.2
70.9
2.1
880 MHz
19.9
43.6
63.4
72.5
2
894 MHz
19.8
43.1
63.7
73
2
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MRFE6S8046GNR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BB
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參數(shù)描述
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MRFE6S9045N 制造商:Freescale Semiconductor 功能描述:
MRFE6S9045NR1 功能描述:射頻MOSFET電源晶體管 HV6E 45W NI270-2 FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET
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