參數(shù)資料
型號: MRFE6P9220HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數(shù): 9/12頁
文件大?。?/td> 403K
代理商: MRFE6P9220HR3
6
Freescale Semiconductor
RF Product Device Data
MRFE6P9220HR3
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
17
11
15
910
850
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 47 Watts Avg.
900
890
880
870
860
20.7
65
31
28
50
55
60
η
D
,DRAIN
EFFICIENCY
(%)
ηD
19.2
18.9
18.3
18
20.4
20.1
19.8
29
27
40
9
13
18.6
19.5
30
45
7
ALT1
VDD = 28 Vdc, Pout = 47 W (Avg.)
IDQ = 1600 mA, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
17.7
Figure 4. CW Power Gain versus Output Power
17
20.5
1
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) CW
20
19
100
300
G
ps
,POWER
GAIN
(dB)
17.5
1600 mA
19.5
18.5
18
10
800 mA
VDD = 28 Vdc
f = 880 MHz
16.5
21.5
21
1200 mA
Figure 5. Intermodulation Distortion Products
versus Tone Spacing
10
70
10
0.1
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 220 W (PEP)
IDQ = 1600 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
30
40
50
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
60
20
IM3U
IM3L
IM5U
IM5L
IM7L
IM7U
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 6. Single-Carrier N-CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
0
65
Pout, OUTPUT POWER (WATTS) CW
60
5
30
10
15
25
45
10
100
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
Gps
ACPR
30
_C
40
1
300
20
35
85
_C
TC = 30_C
ηD
VDD = 28 Vdc, IDQ = 1600 mA
f = 880 MHz, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
25
_C
25
_C
85
_C
50
55
30
_C
85
_C
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