參數(shù)資料
型號(hào)： MRFE6P3300HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁(yè)數(shù)： 10/12頁(yè)
文件大?。?/td> 445K
代理商： MRFE6P3300HR3
MRFE6P3300HR3
7
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
800
15
22
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 32 Vdc
IDQ = 1600 mA
f = 860 MHz
100
10
20
19
18
17
16
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
1
TC = -30 _C
85
_C
25
_C
-30
_C
21
60
25
_C
85
_C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 28 V
G
ps
,POWER
GAIN
(dB)
400
16
50
200
18
IDQ = 1600 mA
f = 860 MHz
32 V
0
100
150
250
300
350
30 V
17
19
20
21
250
107
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 32 Vdc, Pout = 270 W PEP, and ηD = 44.8%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
106
105
104
110
130
150
170
190
MTTF
(HOURS)
210
230
相關(guān)PDF資料
PDF描述
MRFE6P3300HR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6P9220HR3 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6S8046NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRFE6S8046GNR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BB
MRFE6S9045NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRFE6P3300HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRFE6P3300HR5 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 300W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6P9220HR3 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6P9220HR5 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRFE6S8046GNR1 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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