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參數(shù)資料
| 型號： | MRF9180R6 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-1230, CASE 375D-04, 4 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 333K |
| 代理商： | MRF9180R6 |
MRF9180R6
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 Adc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.5
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
6
—
S
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
77
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.8
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2
700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
16
17.5
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2
700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
35
39
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2
700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2
700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
—
-15
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2
700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Gps
—
17.5
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2
700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η
—
38.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2
700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD
—
-31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2
700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL
—
-13
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, CW, IDQ = 2
700 mA,
f1 = 880.0 MHz)
P1dB
—
170
—
W
(1) Each side of device measured separately.
(2) Device measured in push-pull configuration.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9180S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9200LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N−Channel Enhancement−Mode Lateral MOSFETs |
| MRF9200LR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9200LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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