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參數(shù)資料
| 型號(hào)： | MRF9180R6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 309K |
| 代理商： | MRF9180R6 |
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RF Device Data
Freescale Semiconductor
MRF9180R6
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage (2)
(VDS = 26 Vdc, ID = 1400 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.5
Vdc
Forward Transconductance (1)
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
6
—
S
Dynamic Characteristics (1,3)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
77
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.8
—
pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system)
Two-T one Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
16
17.5
—
dB
Two-T one Drain Efficiency
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
35
39
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 1400 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
—
-15
-9
dB
Two-T one Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Gps
—
17.5
—
dB
Two-T one Drain Efficiency
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η
—
38.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD
—
-31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 1400 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL
—
-13
—
dB
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
3. Part internally input matched.
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|---|---|
| MRF9180S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
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| MRF9200LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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