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參數(shù)資料
| 型號： | MRF9135LSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 377K |
| 代理商： | MRF9135LSR3 |
N
O
T
RE
CO
MMENDED
F
O
R
NEW
DE
S
IG
N
NOT
RECOMMENDED
FOR
NEW
DESIGN
MRF9135LSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
10
22
1
0
60
18
40
16
30
14
20
12
10
20
50
900
865
870
875
880
885
890
895
11
19
860
60
35
IRL
Gps
ACPR
VDD = 26 Vdc
Pout = 25 W (Avg.)
IDQ = 1100 mA
NCDMA IS95 Pilot, Sync, Paging
Traffic Codes 8 through 13
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit
Performance
G
ps
,POWER
GAIN
(dB)
18
30
17
25
16
20
15
20
14
30
13
40
12
50
18
10
12
14
16
INPUT
RETURN
LOSS
(dB)
IRL,
ACPR
(dBc)
100
15.5
19
1
IDQ = 1650 mA
1320 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
18.5
18
17.5
17
16.5
16
1100 mA
880 mA
10
100
60
1
1650 mA
IDQ = 880 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
20
30
40
50
10
1100 mA
1320 mA
100
80
10
1
7th Order
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
O
R
T
ION
(dBc)
IMD,
20
30
40
50
60
70
10
5th Order
3rd Order
Gps
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Output Power
G
ps
,POWER
GAIN
(dB)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D,
DRAIN
EFFICIENCY
(%)
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參數(shù)描述 |
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