參數(shù)資料
型號: MRF9120S
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-860S, CASE 375H-03, 5 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 344K
代理商: MRF9120S
3
MRF9120 MRF9120S
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
15
16.5
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
36
39
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
–31
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
–16
–9
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Gps
16.5
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
η
40.5
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IMD
–30
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IRL
–13
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
P1dB
120
W
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
Gps
16
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f1 = 880.0 MHz)
η
51
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
(2) Device measured in push–pull configuration.
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