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參數(shù)資料
| 型號(hào)： | MRF9100R3 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 395K |
| 代理商： | MRF9100R3 |
MRF9100 MRF9100R3 MRF9100SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 500
μ
Adc)
V
GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 800 mAdc)
V
GS(Q)
3
—
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.19
0.5
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
8
—
S
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.0
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Output Power, 1 dB Compression Point, CW
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 960 MHz)
P
1dB
100
110
—
W
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f = 960 MHz)
G
ps
16
17
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f = 960 MHz)
η
47
51
—
%
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 100 W CW, I
DQ
= 800 mA,
f1 = 921 MHz and 960 MHz,
f2 = 940 MHz)
IRL
—
—
—
–20
–10
—
dB
Third Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 100 W PEP, I
DQ
= 800 mA,
f = Full GSM Band 921–960 MHz, Tone Spacing = 100 kHz)
IMD
—
–30
—
dBc
Output Mismatch Stress
(V
DD
= 26 Vdc, I
DQ
= 800 mA, P
out
= 100 W CW,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of
Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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|---|---|
| MRF9100SR3 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9120 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9120LR3 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9120LR5 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9120R3 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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