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參數(shù)資料
| 型號： | MRF9100LSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 360K |
| 代理商： | MRF9100LSR3 |
2
RF Device Data
Freescale Semiconductor
MRF9100LR3 MRF9100LSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 500 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 800 mAdc)
VGS(Q)
3
—
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.5
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.0
—
pF
Functional Tests (In Freescale Test Fixture)
Output Power, 1 dB Compression Point, CW
(VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz)
P1dB
100
110
—
W
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,
f = 960 MHz)
Gps
16
17
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,
f = 960 MHz)
η
47
51
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,
f1 = 921 MHz and 960 MHz,
f2 = 940 MHz)
IRL
—
-20
-10
—
dB
Third Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA,
f = Full GSM Band 921-960 MHz, Tone Spacing = 100 kHz)
IMD
—
-30
—
dBc
1. Part is internally matched both on input and output.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9100R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9120 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9120LR3 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9120LR5 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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