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參數(shù)資料
| 型號(hào)： | MRF9100LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 11/12頁(yè) |
| 文件大?。?/td> | 360K |
| 代理商： | MRF9100LR3 |
8
RF Device Data
Freescale Semiconductor
MRF9100LR3 MRF9100LSR3
TYPICAL CHARACTERISTICS
1000
10
20
800
25
0
IRL
Gps
Pout = 30 W
f, FREQUENCY (MHz)
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
INPUT
RETURN
LOSS
(dB)
IRL,
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
Pout = 30 W
100 W
18
5
16
10
14
15
12
20
975
950
925
900
875
850
825
6
0
160
0
56
Pin, INPUT POWER (WATTS)
Figure 6. Output Power and Efficiency versus
Input Power
,DRAIN
EFFICIENCY
(%)
η
P
out
,OUTPUT
POWER
(W
A
TTS)
140
49
120
42
100
35
80
28
60
21
40
14
20
7
5
4
3
2
1
Pout
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
η
865 MHz
960 MHz
865 MHz
1000
15
19
1
IDQ = 1200 mA
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain and Input Return Loss
versus Frequency
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
f = 920 MHz
TC = 25_C
100
10
18
17
16
IDQ = 600 mA
IDQ = 800 mA
IDQ = 1000 mA
1000
12
19
1
TC = 20_C
Pout, OUTPUT POWER (WATTS)
Figure 8. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
IDQ = 800 mA
f = 920 MHz
18
17
16
15
14
13
10
100
25
_C
85
_C
Figure 9. EVM and Efficiency versus Output
Power
Figure 10. Spectral Regrowth versus Output
Power
Pout, OUTPUT POWER (WATTS) AVG.
EVM
(%)
100
4
10
VDD = 28 Vdc
IDQ = 800 mA
f = 945 MHz
8
6
0
10
1
2
EVM
20
50
40
30
0
10
,DRAIN
EFFICIENCY
(%)
h
η
Pout, OUTPUT POWER (WATTS) AVG.
SPECTRAL
REGROWTH
(dBc)
100
75
60
VDD = 28 Vdc
IDQ = 800 mA
f = 945 MHz
65
70
85
10
0
80
@ 400 kHz
@ 600 kHz
50
55
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9100LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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| MRF9100SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
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| MRF9120LR3 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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