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參數(shù)資料
| 型號： | MRF9080LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 217K |
| 代理商： | MRF9080LR3 |
2
RF Device Data
Freescale Semiconductor
MRF9080LR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vds, VGS = 0)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
8.0
—
S
Dynamic Characteristics (1)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
73
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.9
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)
P1dB
68
75
—
W
Common-Source Amplifier Power Gain @ 70 W (Min)
(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)
Gps
17
18.5
20
dB
Drain Efficiency @ Pout = 70 W
(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)
η1
47
52
—
%
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)
η2
—
55
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 960 MHz)
IRL
9.5
12.5
—
dB
1. Part is internally input matched.
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9080LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9080LR5 | 功能描述:射頻MOSFET電源晶體管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF9080R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9080R5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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