參數(shù)資料
型號： MRF9060LR1
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-360, CASE 360B-05, 2 PIN
文件頁數(shù)： 6/12頁
文件大小： 348K
代理商： MRF9060LR1
MRF9060LR1 MRF9060LSR1
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
16
17
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
36
40
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
-16
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
17
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
39
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
-31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
-16
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,
f1 = 945.0 MHz)
P1dB
—
70
—
W
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,
f1 = 945.0 MHz)
Gps
—
17
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,
f1 = 945.0 MHz)
η
—
51
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
No Degradation In Output Power
相關PDF資料
PDF描述
MRF9060LSR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9060LSR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9060MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF9060MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF9060NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
相關代理商/技術參數(shù)
參數(shù)描述
MRF9060LR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060LR5 功能描述:射頻MOSFET電源晶體管 60W 1GHZ RFPWR FET NI360 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9060LSR1 功能描述:射頻MOSFET電源晶體管 60W 945MHZ NI360S LOW AU RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9060LSR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060LSR5 功能描述:射頻MOSFET電源晶體管 60W RF PWR FET NI360LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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