參數(shù)資料
型號(hào)： MRF9045NBR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： ROHS COMPLIANT, PLASTIC, CASE 1337-03, 2 PIN
文件頁(yè)數(shù)： 9/16頁(yè)
文件大小： 573K
代理商： MRF9045NBR1
2
RF Device Data
Freescale Semiconductor
MRF9045NR1 MRF9045NBR1
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 μAdc)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
VGS(Q)
3
3.7
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.22
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
4
—
S
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
70
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
38
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.7
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
19
—
dB
Two-Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
41
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
-14
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
19
—
dB
Two-Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
-31
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
-13
—
dB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9045NR1 功能描述:射頻MOSFET電源晶體管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET
MRF9045S 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR
MRF904SNR1 制造商:Freescale Semiconductor 功能描述:
MRF905 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF TRANSISTOR
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