參數資料
型號: MRF8S26060HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CASE 465J-02, NI-400S-240, 2 PIN
文件頁數: 8/14頁
文件大?。?/td> 220K
代理商: MRF8S26060HSR3
MRF8S26060HR3 MRF8S26060HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 2620-2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
60
W
IMD Symmetry @ 52 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
16
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
80
MHz
Gain Flatness in 70 MHz Bandwidth @ Pout = 15.5 W Avg.
GF
0.2
dB
Gain Variation over Temperature
(-30
°C to +85°C)
ΔG
0.014
dB/
°C
Output Power Variation over Temperature
(-30
°C to +85°C)
ΔP1dB
0.006
dBm/
°C
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