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參數資料
| 型號： | MRF8P20165WHSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁數： | 12/16頁 |
| 文件大?。?/td> | 738K |
| 代理商： | MRF8P20165WHSR3 |
MRF8P20165WHR3 MRF8P20165WHSR3
5
RF Device Data
Freescale Semiconductor
Figure 3. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Layout
VGGA
C7
R1
C5
Z1
R3
C8
C6
C3
C4
C1
C2
R2
C29
C30
C27
C28
C24
C23
C18
C17
C22
C21
C19
C20
C10
C9
C16
C15
C12
C11
C13
C14
C
P
C25
C26
MRF8P20165W
Rev. 0
VGGB
VDDB
VDDA
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Table 6. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.6 pF Chip Capacitor
ATC600S1R6BT250XT
ATC
C2
1.8 pF Chip Capacitor
ATC600S1R8BT250XT
ATC
C3, C4, C5, C6, C21, C22
C29, C30
10 pF Chip Capacitors
ATC600S100JT250XT
ATC
C7, C8, C23, C24
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C9,C11,C13, C15
2.7 pF Chip Capacitors
ATC600S2R7BT250XT
ATC
C10, C12, C14, C16, C17
1 pF Chip Capacitors
ATC600S1R0BT250XT
ATC
C18, C28
0.6 pF Chip Capacitors
ATC600S0R6BT250XT
ATC
C19, C20
1.5 pF Chip Capacitors
ATC600S1R5BT250XT
ATC
C25, C26
330 μF, 35 V Electrolytic Capacitors
MCGPR35V337M10X16--RH
Multicomp
C27
0.5 pF Chip Capacitor
ATC600S0R5BT250XT
ATC
R1, R2
2.37 , 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
R3
51 , 1/4 W Chip Resistor
CRCW120651R0FKEA
Vishay
Z1
1900 MHz Band 90°, 3 dB Hybrid Coupler
GSC351--HYB1900
Soshin
PCB
0.030″, εr =3.48
RO4350
Rogers
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF8P20165WHSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HR3 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HSR3 | 功能描述:射頻MOSFET電源晶體管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HSR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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