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參數(shù)資料
| 型號： | MRF8P20165WHR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件頁數(shù)： | 15/16頁 |
| 文件大?。?/td> | 738K |
| 代理商： | MRF8P20165WHR5 |
8
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
TYPICAL CHARACTERISTICS
Figure 8. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
--1
--3
--5
20
0
--2
--4
OU
TPU
T
CO
MPR
ESSION
AT
0.
01
%
PROBABILITY
ON
CCDF
(dB)
10
30
40
60
0
60
50
40
30
20
10
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
--3 dB = 39 W
50
ηD
ACPR
PARC
AC
PR
(d
Bc)
--40
--10
--15
--20
--30
--25
--35
17.5
G
ps
,P
OWER
GAIN
(d
B)
17
16.5
16
15.5
15
14.5
Gps
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28 Vdc,IDQA = 550 mA, VGSB =1.3 Vdc
f = 1960 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
--1 dB = 17 W
--2 dB = 28 W
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
--10
--20
12
18
0
60
50
40
30
20
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
G
ps
,P
OWER
GAIN
(d
B)
17
16
10
100
200
10
--60
AC
PR
(d
Bc)
15
14
13
0
--30
--40
--50
VDD =28 Vdc,IDQA = 550 mA, VGSB =1.3 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
1930 MHz
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
1995 MHz
1960 MHz
1930 MHz
1960 MHz
1995 MHz
1930 MHz
1960 MHz
1995 MHz
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7
versus Output Power
12
18
--70
--10
--20
--30
--40
--50
IM3,
IM5,
IM7
(dBc
)
G
ps
,P
OWER
GAIN
(d
B)
17
16
10
200
--60
15
14
13
Figure 11. Broadband Frequency Response
0
18
f, FREQUENCY (MHz)
VDD =28 Vdc
Pin =0 dBm
IDQA = 550 mA
VGSB =1.3 Vdc
12
9
6
GAIN
(d
B)
15
3
1800 1835
1870
1905
1940
1975
2010
2045
2080
100
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
IM7--L
Gps
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
VDD =28 Vdc,IDQA = 550 mA, VGSB = 1.3 Vdc, f1 = 1945 MHz
f2 = 1975 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
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| MRF8P20165WHSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HR3 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P23080HSR3 | 功能描述:射頻MOSFET電源晶體管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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