參數(shù)資料
型號(hào): MRF6S9125NBR1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應(yīng)晶體管
文件頁數(shù): 6/16頁
文件大?。?/td> 480K
代理商: MRF6S9125NBR1
6
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
TYPICAL CHARACTERISTICS
G
p
,
I
A
25
20
910
850
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ P
out
= 27 Watts Avg.
890
880
870
860
18.5
20.5
20.3
70
34
32
30
40
50
60
η
D
,
E
20
19.8
19.5
19.3
19
30
900
ALT1
15
10
5
V
DD
= 28 Vdc, P
out
= 27 W (Avg.)
I
DQ
= 950 mA, NCDMA IS95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
G
p
,
I
A
25
20
910
850
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ P
out
= 62.5 Watts Avg.
900
890
880
870
860
18
19.6
19.4
70
52
48
44
40
50
60
η
D
,
E
19.2
19
18.8
18.6
18.4
30
15
10
5
V
DD
= 28 Vdc, P
out
= 62.5 W (Avg.)
I
DQ
= 950 mA, NCDMA IS95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
Figure 5. Two-Tone Power Gain versus
Output Power
100
16
22
I
DQ
= 1475 mA
P
out
, OUTPUT POWER (WATTS) PEP
20
18
10
G
p
,
21
19
1187 mA
950 mA
1
300
V
DD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements, 100 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
30
10
1
P
out
, OUTPUT POWER (WATTS) PEP
10
20
100
60
40
I
I
50
18.2
40
17
712 mA
475 mA
18.8
28
η
D
η
D
ALT1
300
I
DQ
= 1425 mA
1187 mA
950 mA
712 mA
475 mA
V
DD
= 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements, 100 MHz Tone Spacing
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