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參數(shù)資料
| 型號： | MRF6402 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MRF6402 |
MRF6402
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 Adc, VCE = 20 Vdc)
hFE
50
—
200
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz)
Cob
—
6
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 4 W, ICQ = 40 mA, f = 1.88 GHz)
Gp
9
10
—
dB
Collector Efficiency
(VCC = 26 V, Pout = 4 W, f = 1.88 GHz)
η
40
43
—
%
Load Mismatch
(VCC = 26 V, Pout = 4.5 W, ICQ = 40 mA, f = 1.88 GHz,
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
Ψ
No Degradation in Output Power
f
(GHz)
1.75
1.84
1.95
0.12 + j0.18
0.13 + j0.2
0.15 + j0.16
0.06 + j0.05
0.06 + j0.04
0.06 + j0.02
Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ VCE = 26 V, ICQ = 40 mA, Pout = 4.5 W
Zin
(
)
ZOL*
(
)
ZOL*: Conjugate of optimum load impedance
into which the device operates at a
given output power, voltage, current
and frequency.
Zin
ZOL*
f = 1.95 GHz
1.75
f = 1.95 GHz
1.75
Zo = 50
1.84
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