參數(shù)資料
型號(hào): MRF5S19090LSR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780S, CASE 465A-06, 2 PIN
文件頁(yè)數(shù): 7/12頁(yè)
文件大小: 420K
代理商: MRF5S19090LSR3
A
A
F
Freescale Semiconductor, Inc.
MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
7
For More Information On This Product,
Go to: www.freescale.com
V
DD
= 28 V, I
DQ
= 850 mA, P
out
= 18 W Avg.
Figure 11. Series Equivalent Input and Output Impedance
f = 1930 MHz
f = 1990 MHz
Z
o
= 10
f = 1930 MHz
f = 1990 MHz
f
MHz
Z
source
Z
load
1930
1960
1990
2.98 - j5.12
4.06 - j4.64
3.36 - j4.65
2.07 - j1.31
2.02 - j1.18
1.93 - j1.01
Z
load
*
Z
source
Z
source
=
Test circuit impedance as measured from
gate to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相關(guān)PDF資料
PDF描述
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130SR3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21150 RF POWER FIELD EFFECT TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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