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參數(shù)資料
| 型號： | MRF3866 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, M240, SO-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | MRF3866 |
MRF3866R2
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
5.0
10
—
200
—
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
VCE(sat)
—
1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
fT
500
—
MHz
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
3.0
pF
FUNCTIONAL TEST
Amplifier Power Gain
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
Gpe
10
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz)
NOTE:
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
η
45
—
%
VCE
(Volts)
IC
f
S11
S21
S12
S22
(mA)
(MHz)
S11
0.67
0.69
0.70
0.71
0.72
0.72
0.72
0.72
0.71
0.70
∠
φ
S21
13.75
6.93
4.57
3.38
2.66
2.17
1.85
1.61
1.40
1.25
∠
φ
S12
0.016
0.024
0.032
0.042
0.049
0.056
0.061
0.068
0.075
0.084
∠
φ
S22
0.32
0.30
0.32
0.34
0.37
0.40
0.43
0.47
0.50
0.53
∠
φ
15
50
100
200
300
400
500
600
700
800
900
1000
–166
–176
177
172
168
164
160
155
151
146
92
81
73
67
61
54
49
44
39
34
44
53
57
59
59
61
63
65
64
68
–27
–24
–31
–37
–45
–53
–60
–66
–73
–79
Table 1. MRF3866R2 Common Emitter S–Parameters
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF3866G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF3866R1 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF3866R2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF390 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF392 | 功能描述:射頻雙極電源晶體管 100-400MHz 125Watts 28Volt Gain 10dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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