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參數(shù)資料
| 型號： | MRF374A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-650, CASE 375F-04, 5 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 783K |
| 代理商： | MRF374A |
1
MRF374A
Motorola, Inc. 2003
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
28/32 volt transmitter equipment.
Typical Two–Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 130 Watts PEP
Power Gain — 17.3 dB
Efficiency — 41%
IMD — –32.5 dBc
100% Tested for Load Mismatch Stress at All Phase Angles with 10:1
VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz
Integrated ESD Protection
Excellent Thermal Stability
Characterized with Differential Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
70
Vdc
Gate–Source Voltage
V
GS
– 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
302
1.72
Watts
W/
°
C
Storage Temperature Range
T
stg
– 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.58
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF374A/D
SEMICONDUCTOR TECHNICAL DATA
470 – 860 MHz, 130 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F–04, STYLE 1
NI–650
REV 3
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF374A_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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